JPH0254659B2 - - Google Patents

Info

Publication number
JPH0254659B2
JPH0254659B2 JP59073455A JP7345584A JPH0254659B2 JP H0254659 B2 JPH0254659 B2 JP H0254659B2 JP 59073455 A JP59073455 A JP 59073455A JP 7345584 A JP7345584 A JP 7345584A JP H0254659 B2 JPH0254659 B2 JP H0254659B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
tungsten
insulating film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59073455A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60217645A (ja
Inventor
Seiji Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59073455A priority Critical patent/JPS60217645A/ja
Publication of JPS60217645A publication Critical patent/JPS60217645A/ja
Publication of JPH0254659B2 publication Critical patent/JPH0254659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59073455A 1984-04-12 1984-04-12 半導体装置の製造方法 Granted JPS60217645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59073455A JPS60217645A (ja) 1984-04-12 1984-04-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59073455A JPS60217645A (ja) 1984-04-12 1984-04-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60217645A JPS60217645A (ja) 1985-10-31
JPH0254659B2 true JPH0254659B2 (en]) 1990-11-22

Family

ID=13518726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59073455A Granted JPS60217645A (ja) 1984-04-12 1984-04-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60217645A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824801A (en) * 1986-09-09 1989-04-25 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing aluminum bonding pad with PSG coating
KR950010041B1 (ko) * 1992-03-28 1995-09-06 현대전자산업주식회사 콘택 홀(contact hole) 구조 및 그 제조방법

Also Published As

Publication number Publication date
JPS60217645A (ja) 1985-10-31

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